General remarks about the research activities:
nipi-structures (doping superlattices) are periodic series of alternatively doped semiconductor layers. This layer scheme leads to a quasi parabolic potential modulation of the conduction and valence band edges. Such potential shapes can be designed in a way that they are suitable to investigate confinement phenomena. The key-effects such as the drastic enhancement of the excess carrier lifetime, the giant ambipolar diffusion and the absorption of photons with energies below the band gap makes nipi-structures very interesting for detector applications. Also the application as optical modulators and switches is investigated by most groups of the "nipi-community" (mainly in wide gap systems such as GaAs-nipi and GaAs/AlGaAs- hetero-nipi structures).

In our work the nipi-concept is not only used in context with the development of novel detector concepts, it is also used for clearly "non-nipi- related" problems of basic research. Based on the nipi-concept we realize structures which are also suitable for quantum transport experiments in high magnetic fields and the related effects.


We are convinced that PbTe structures based on the nipi - concept are interesting systems for basic research as well. Due to the unique properties of PbTe our structures can be seen as an important supplementary system for the GaAs based quantum wells. 
Our activities cover all steps needed for fabrication, investigation and modelling of the samples:


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